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AON7404G MOSFET Transistor

The AON7404G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AON7404G transistor as follows.

Circuit diagram symbol of the AON7404G transistor

AON7404G Transistor Specification

Transistor Code AON7404G
Transistor Type MOSFET
Control Channel Type N-Channel
Package DFN3X3EP
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 20A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0043Ohm
Power Dissipation (Maximum) PD 28W
Drain-Source Capacitance 485pF
Rise Time 17nS
Gate-Threshold Voltage (Maximum) 1.25V

AON7404G MOSFET Transistor Overview

The AON7404G is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a DFN3X3EP package, making it suitable for projects that require moderate power handling and reliable switching performance.

Key Electrical Characteristics of the AON7404G MOSFET

Followings are the key electrical characteristics of the AON7404G MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)
  • The maximum drain-source voltage that can safely block between drain and source in AON7404G MOSFET transistor is 20V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Gate-Source Voltage (VGS)
  • The maximum safe voltage that can be used between the gate and source of the AON7404G MOSFET transistor is 12V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

  • Maximum Drain Current (ID)
  • The maximum continuous current flowing between the drain and source of the AON7404G MOSFET transistor is 20A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))
  • The internal resistance between the drain and source of AON7404G MOSFET transistor when the transistor is fully turned on is 0.0043 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)
  • The maximum power that the AON7404G MOSFET transistor can comfortably transfer into heat without breaking is 28W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Drain-Source Capacitance
  • The capacitance between drain and source of the AON7404G MOSFET transistor is 485pF. This value influences to the switching speed of the AON7404G MOSFET transistor and the high-frequency performance.

    This is the ability to hold a small electric charge between the drain and source of a MOSFET transistor, like a tiny built-in capacitor.

  • Rise Time
  • The time that the drain current or output voltage increases between low to high when the AON7404G MOSFET transistor is switched on is 17nS. This is the rate at which AON7404G MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

UXPython is not the creator or an official representative of the AON7404G MOSFET transistor. You can download the official AON7404G MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

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