free stats

Home » Electronics » FET » AON4602 Transistor

AON4602 MOSFET Transistor

The AON4602 is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AON4602 transistor as follows.

Circuit diagram symbol of the AON4602 transistor

AON4602 Transistor Specification

Transistor Code AON4602
Transistor Type MOSFET
Control Channel Type NP-Channel
Package DFN3X2
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 8V
Drain Current (Maximum) ID 3.4A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.09Ohm
Power Dissipation (Maximum) PD 1.7W
Operating Junction Temperature (Maximum) 150°C

AON4602 MOSFET Transistor Overview

Key Electrical Characteristics of the AON4602 MOSFET

Followings are the key electrical characteristics of the AON4602 MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in AON4602 MOSFET transistor is 20V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Gate-Source Voltage (VGS)

    • The maximum safe voltage that can be used between the gate and source of the AON4602 MOSFET transistor is 8V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the AON4602 MOSFET transistor is 3.4A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of AON4602 MOSFET transistor when the transistor is fully turned on is 0.09 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the AON4602 MOSFET transistor can comfortably transfer into heat without breaking is 1.7W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the AON4602 MOSFET transistor is switched on is . This is the rate at which AON4602 MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

Thermal Performance of the AON4602 MOSFET

  • Maximum Operating Junction Temperature

    • The maximum internal temperature of the semiconductor junction of AON4602 MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the AON4602 MOSFET transistor. You can download the official AON4602 MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in NP-Channel MOSFET

AFN5904W AFN5904W MOSFET Transistor AFN5908W AFN5908W MOSFET Transistor AM5350N AM5350N MOSFET Transistor AM5400N AM5400N MOSFET Transistor AM5423P AM5423P MOSFET Transistor AM5430N AM5430N MOSFET Transistor AM5460N AM5460N MOSFET Transistor AM5922N AM5922N MOSFET Transistor AON4407 AON4407 MOSFET Transistor AON4413 AON4413 MOSFET Transistor AON4420 AON4420 MOSFET Transistor AON4701 AON4701 MOSFET Transistor CHM5813ESQ2GP CHM5813ESQ2GP MOSFET Transistor MSFA0M02X8 MSFA0M02X8 MOSFET Transistor QM2411SN8 QM2411SN8 MOSFET Transistor QM2415SN8 QM2415SN8 MOSFET Transistor QM2608N8 QM2608N8 MOSFET Transistor