AFN8918 MOSFET Transistor

The AFN8918 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AFN8918 transistor as follows.

AFN8918 Transistor Specification

Transistor Code		AFN8918
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT-89
Transistor SMD Code		18*
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	4.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.03Ohm
Power Dissipation (Maximum)	PD	1.45W
Drain-Source Capacitance		110pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		10nS
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		10nC

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