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AFC2519W MOSFET Transistor

The AFC2519W is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AFC2519W transistor as follows.

Circuit diagram symbol of the AFC2519W transistor

AFC2519W Transistor Specification

Transistor Code AFC2519W
Transistor Type MOSFET
Control Channel Type NP-Channel
Package DFN2X2-6L
Transistor SMD Code W19*
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 4.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.05Ohm
Power Dissipation (Maximum) PD 6.5W
Drain-Source Capacitance 115pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 8nS
Gate-Threshold Voltage (Maximum) 0.8V
Total Gate Charge 4.2nC

AFC2519W MOSFET Transistor Overview

Key Electrical Characteristics of the AFC2519W MOSFET

Followings are the key electrical characteristics of the AFC2519W MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in AFC2519W MOSFET transistor is 20V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Gate-Source Voltage (VGS)

    • The maximum safe voltage that can be used between the gate and source of the AFC2519W MOSFET transistor is 12V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the AFC2519W MOSFET transistor is 4.5A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of AFC2519W MOSFET transistor when the transistor is fully turned on is 0.05 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the AFC2519W MOSFET transistor can comfortably transfer into heat without breaking is 6.5W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Drain-Source Capacitance

    • The capacitance between drain and source of the AFC2519W MOSFET transistor is 115pF. This value influences to the switching speed of the AFC2519W MOSFET transistor and the high-frequency performance.

    This is the ability to hold a small electric charge between the drain and source of a MOSFET transistor, like a tiny built-in capacitor.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the AFC2519W MOSFET transistor is switched on is 8nS. This is the rate at which AFC2519W MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

Thermal Performance of the AFC2519W MOSFET

  • Maximum Operating Junction Temperature

    • The maximum internal temperature of the semiconductor junction of AFC2519W MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the AFC2519W MOSFET transistor. You can download the official AFC2519W MOSFET transistor datasheet to get more infromation about this transistor.

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