free stats

Home » Electronics » FET » 630A Transistor

630A MOSFET Transistor

The 630A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 630A transistor as follows.

Circuit diagram symbol of the 630A transistor

630A Transistor Specification

Transistor Code 630A
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO251_TO252
Drain-Source Voltage (Maximum) VDS 200V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 9A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.25Ohm
Power Dissipation (Maximum) PD 83W
Drain-Source Capacitance 51.5pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 10.7nS

630A MOSFET Transistor Overview

The 630A is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a TO251_TO252 package, making it suitable for projects that require high power handling and reliable switching performance.

Key Electrical Characteristics of the 630A MOSFET

Followings are the key electrical characteristics of the 630A MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in 630A MOSFET transistor is 200V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Gate-Source Voltage (VGS)

    • The maximum safe voltage that can be used between the gate and source of the 630A MOSFET transistor is 30V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the 630A MOSFET transistor is 9A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of 630A MOSFET transistor when the transistor is fully turned on is 0.25 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the 630A MOSFET transistor can comfortably transfer into heat without breaking is 83W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Drain-Source Capacitance

    • The capacitance between drain and source of the 630A MOSFET transistor is 51.5pF. This value influences to the switching speed of the 630A MOSFET transistor and the high-frequency performance.

    This is the ability to hold a small electric charge between the drain and source of a MOSFET transistor, like a tiny built-in capacitor.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the 630A MOSFET transistor is switched on is 10.7nS. This is the rate at which 630A MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

Thermal Performance of the 630A MOSFET

  • Maximum Operating Junction Temperature

    • The maximum internal temperature of the semiconductor junction of 630A MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the 630A MOSFET transistor. You can download the official 630A MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

2N25 2N25 MOSFET Transistor 2SK4070 2SK4070 MOSFET Transistor 3N25 3N25 MOSFET Transistor 5N20A 5N20A MOSFET Transistor 60N03 60N03 MOSFET Transistor 60N04 60N04 MOSFET Transistor CM2N60C CM2N60C MOSFET Transistor CM2N65C CM2N65C MOSFET Transistor CM2N80C CM2N80C MOSFET Transistor CM3N50C CM3N50C MOSFET Transistor CM4N60C CM4N60C MOSFET Transistor CM4N65C CM4N65C MOSFET Transistor CM5N50C CM5N50C MOSFET Transistor CM60N03C CM60N03C MOSFET Transistor CM8N06C CM8N06C MOSFET Transistor CS4N65 CS4N65 MOSFET Transistor G4N65 G4N65 MOSFET Transistor