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3SK291 MOSFET Transistor

The 3SK291 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 3SK291 transistor as follows.

Circuit diagram symbol of the 3SK291 transistor

3SK291 Transistor Specification

Transistor Code 3SK291
Transistor Type MOSFET
Control Channel Type N-Channel
Package 2-3J1A
Transistor SMD Code UF
Drain-Source Voltage (Maximum) VDS 12.5V
Gate-Source Voltage (Maximum) VGS 8V
Drain Current (Maximum) ID 0.03A
Power Dissipation (Maximum) PD 0.15W
Operating Junction Temperature (Maximum) 125°C

3SK291 MOSFET Transistor Overview

The 3SK291 is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a 2-3J1A package, making it suitable for projects that require low power handling and reliable switching performance.

Key Electrical Characteristics of the 3SK291 MOSFET

Followings are the key electrical characteristics of the 3SK291 MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in 3SK291 MOSFET transistor is 12.5V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Gate-Source Voltage (VGS)

    • The maximum safe voltage that can be used between the gate and source of the 3SK291 MOSFET transistor is 8V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the 3SK291 MOSFET transistor is 0.03A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Maximum Power Dissipation (PD)

    • The maximum power that the 3SK291 MOSFET transistor can comfortably transfer into heat without breaking is 0.15W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the 3SK291 MOSFET transistor is switched on is . This is the rate at which 3SK291 MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

Thermal Performance of the 3SK291 MOSFET

  • Maximum Operating Junction Temperature

    • The maximum internal temperature of the semiconductor junction of 3SK291 MOSFET transistor can be safely operated at the 125°C without damaging the transistor.

UXPython is not the creator or an official representative of the 3SK291 MOSFET transistor. You can download the official 3SK291 MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

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