3N163 MOSFET Transistor

The 3N163 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 3N163 transistor as follows.

3N163 Transistor Specification

Transistor Code		3N163
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO72
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	0.05A
Drain-Source On-State Resistance (Maximum)	RDS(on)	250Ohm
Power Dissipation (Maximum)	PD	0.375W
Drain-Source Capacitance		2.5pF
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		5V

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