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2SK3376MFV MOSFET Transistor

The 2SK3376MFV is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2SK3376MFV transistor as follows.

Circuit diagram symbol of the 2SK3376MFV transistor

2SK3376MFV Transistor Specification

Transistor Code 2SK3376MFV
Transistor Type MOSFET
Control Channel Type N-Channel
Package VESM
Transistor SMD Code 3*
Drain-Source Voltage (Maximum) VDS 20V
Drain Current (Maximum) ID 0.00048A
Drain-Source On-State Resistance (Maximum) RDS(on) 1500Ohm
Power Dissipation (Maximum) PD 0.1W
Operating Junction Temperature (Maximum) 125°C

2SK3376MFV MOSFET Transistor Overview

The 2SK3376MFV is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a VESM package, making it suitable for projects that require low power handling and reliable switching performance.

Key Electrical Characteristics of the 2SK3376MFV MOSFET

Followings are the key electrical characteristics of the 2SK3376MFV MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in 2SK3376MFV MOSFET transistor is 20V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the 2SK3376MFV MOSFET transistor is 0.00048A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of 2SK3376MFV MOSFET transistor when the transistor is fully turned on is 1500 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the 2SK3376MFV MOSFET transistor can comfortably transfer into heat without breaking is 0.1W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the 2SK3376MFV MOSFET transistor is switched on is . This is the rate at which 2SK3376MFV MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

Thermal Performance of the 2SK3376MFV MOSFET

  • Maximum Operating Junction Temperature

    • The maximum internal temperature of the semiconductor junction of 2SK3376MFV MOSFET transistor can be safely operated at the 125°C without damaging the transistor.

UXPython is not the creator or an official representative of the 2SK3376MFV MOSFET transistor. You can download the official 2SK3376MFV MOSFET transistor datasheet to get more infromation about this transistor.

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