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2SK2602 MOSFET Transistor

The 2SK2602 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2SK2602 transistor as follows.

Circuit diagram symbol of the 2SK2602 transistor

2SK2602 Transistor Specification

Transistor Code 2SK2602
Transistor Type MOSFET
Control Channel Type N-Channel
Package SC65_TO3P
Drain-Source Voltage (Maximum) VDS 600V
Drain Current (Maximum) ID 6A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.25Ohm
Power Dissipation (Maximum) PD 125W
Total Gate Charge 30nC

2SK2602 MOSFET Transistor Overview

The 2SK2602 is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a SC65_TO3P package, making it suitable for projects that require high power handling and reliable switching performance.

Key Electrical Characteristics of the 2SK2602 MOSFET

Followings are the key electrical characteristics of the 2SK2602 MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in 2SK2602 MOSFET transistor is 600V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the 2SK2602 MOSFET transistor is 6A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of 2SK2602 MOSFET transistor when the transistor is fully turned on is 1.25 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the 2SK2602 MOSFET transistor can comfortably transfer into heat without breaking is 125W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the 2SK2602 MOSFET transistor is switched on is . This is the rate at which 2SK2602 MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

UXPython is not the creator or an official representative of the 2SK2602 MOSFET transistor. You can download the official 2SK2602 MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

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