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2SJ605-Z MOSFET Transistor

The 2SJ605-Z is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2SJ605-Z transistor as follows.

Circuit diagram symbol of the 2SJ605-Z transistor

2SJ605-Z Transistor Specification

Transistor Code 2SJ605-Z
Transistor Type MOSFET
Control Channel Type P-Channel
Package TO263
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 65A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.02Ohm
Power Dissipation (Maximum) PD 100W
Drain-Source Capacitance 820pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 14nS
Total Gate Charge 87nC

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