2N6806 MOSFET Transistor

The 2N6806 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2N6806 transistor as follows.

2N6806 Transistor Specification

Transistor Code		2N6806
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-3
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	6.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.8Ohm
Power Dissipation (Maximum)	PD	75W
Drain-Source Capacitance		200pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		100nS
Total Gate Charge		31nC

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