2N4861 MOSFET Transistor

The 2N4861 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2N4861 transistor as follows.

2N4861 Transistor Specification

Transistor Code		2N4861
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-18_TO-206AA
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	4V
Drain Current (Maximum)	ID	0.008A
Drain-Source On-State Resistance (Maximum)	RDS(on)	60Ohm
Power Dissipation (Maximum)	PD	0.36W
Operating Junction Temperature (Maximum)		175°C
Rise Time		10nS

2N4861 MOSFET Transistor Overview

The 2N4861 is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a TO-18_TO-206AA package, making it suitable for projects that require low power handling and reliable switching performance.

Key Electrical Characteristics of the 2N4861 MOSFET

Followings are the key electrical characteristics of the 2N4861 MOSFET transistor

• Maximum Drain-Source Voltage (V_DS)

The maximum drain-source voltage that can safely block between drain and source in 2N4861 MOSFET transistor is 30V.

This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

• Maximum Gate-Source Voltage (V_GS)

The maximum safe voltage that can be used between the gate and source of the 2N4861 MOSFET transistor is 4V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

• Maximum Drain Current (I_D)

The maximum continuous current flowing between the drain and source of the 2N4861 MOSFET transistor is 0.008A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

• Drain-Source On-State Resistance (R_DS(on))

The internal resistance between the drain and source of 2N4861 MOSFET transistor when the transistor is fully turned on is 60 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

• Maximum Power Dissipation (P_D)

The maximum power that the 2N4861 MOSFET transistor can comfortably transfer into heat without breaking is 0.36W. This indicates the amount of power that can safely be dissipated to the device as heat.

• Rise Time

The time that the drain current or output voltage increases between low to high when the 2N4861 MOSFET transistor is switched on is 10nS. This is the rate at which 2N4861 MOSFET transistor switches on.

This shows how fast the MOSFET transistor switched on.

Thermal Performance of the 2N4861 MOSFET

• Maximum Operating Junction Temperature

The maximum internal temperature of the semiconductor junction of 2N4861 MOSFET transistor can be safely operated at the 175°C without damaging the transistor.

UXPython is not the creator or an official representative of the 2N4861 MOSFET transistor. You can download the official 2N4861 MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

2N2608 MOSFET Transistor 2N2609 MOSFET Transistor 2N3796 MOSFET Transistor 2N3797 MOSFET Transistor 2N4091 MOSFET Transistor 2N4092 MOSFET Transistor 2N4093 MOSFET Transistor 2N4856 MOSFET Transistor 2N4856A MOSFET Transistor 2N4857 MOSFET Transistor 2N4857A MOSFET Transistor 2N4858 MOSFET Transistor 2N4858A MOSFET Transistor 2N4859 MOSFET Transistor 2N4859A MOSFET Transistor 2N4860 MOSFET Transistor 2N4860A MOSFET Transistor 2N4861A MOSFET Transistor