SBT5551F NPN Transistor

The SBT5551F is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the SBT5551F transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The SBT5551F transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the SBT5551F transistor as follows.

SBT5551F Transistor Specification

Transistor Code		SBT5551F
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT-23F
Transistor SMD Code		FNF
Collector Power Dissipation (Maximum)	PC	0.2W
Collector-Base Voltage (Maximum)	VCB	180V
Collector-Emitter Voltage (Maximum)	VCE	160V
Collector Current (Maximum)	IC	0.6A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		80
Transition Frequency	FT	100MHz
Collector Capacitance	CC	6pF

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