MJE5742G NPN Transistor

The MJE5742G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MJE5742G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJE5742G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MJE5742G transistor as follows.

MJE5742G Transistor Specification

Transistor Code		MJE5742G
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO220AB
Transistor SMD Code		MJE5742
Collector Power Dissipation (Maximum)	PC	100W
Collector-Emitter Voltage (Maximum)	VCE	400V
Collector Current (Maximum)	IC	8A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	8V
Forward Current Transfer Ratio (hFE Value)		50

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