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MJE3055T NPN Transistor

The MJE3055T is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MJE3055T transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJE3055T transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MJE3055T transistor as follows.

Circuit diagram symbol of the MJE3055T transistor

MJE3055T Transistor Specification

Transistor Code MJE3055T
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO220
Collector Power Dissipation (Maximum) PC 75W
Collector-Base Voltage (Maximum) VCB 70V
Collector-Emitter Voltage (Maximum) VCE 60V
Collector Current (Maximum) IC 10A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 20
Transition Frequency FT 2MHz

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