MJE13005DF NPN Transistor

The MJE13005DF is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MJE13005DF transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJE13005DF transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MJE13005DF transistor as follows.

MJE13005DF Transistor Specification

Transistor Code		MJE13005DF
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO220IS
Collector Power Dissipation (Maximum)	PC	30W
Collector-Base Voltage (Maximum)	VCB	800V
Collector-Emitter Voltage (Maximum)	VCE	400V
Collector Current (Maximum)	IC	5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	10V
Forward Current Transfer Ratio (hFE Value)		18
Transition Frequency	FT	4MHz
Collector Capacitance	CC	65pF

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