MJ200AA55 NPN Transistor

The MJ200AA55 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MJ200AA55 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJ200AA55 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MJ200AA55 transistor as follows.

MJ200AA55 Transistor Specification

Transistor Code		MJ200AA55
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		X99
Collector Power Dissipation (Maximum)	PC	800W
Collector-Base Voltage (Maximum)	VCB	600V
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector Current (Maximum)	IC	200A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		80
Collector Capacitance	CC	1000pF

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