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LBC857BDW1T1G PNP Transistor

The LBC857BDW1T1G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the LBC857BDW1T1G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The LBC857BDW1T1G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the LBC857BDW1T1G transistor as follows.

Circuit diagram symbol of the LBC857BDW1T1G transistor

LBC857BDW1T1G Transistor Specification

Transistor Code LBC857BDW1T1G
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package SC88
Transistor SMD Code 3F
Collector Power Dissipation (Maximum) PC 0.25W
Collector-Base Voltage (Maximum) VCB 50V
Collector-Emitter Voltage (Maximum) VCE 45V
Collector Current (Maximum) IC 0.1A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 220
Transition Frequency FT 100MHz
Collector Capacitance CC 4.5pF

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