KT8170B1 NPN Transistor

The KT8170B1 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the KT8170B1 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The KT8170B1 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the KT8170B1 transistor as follows.

KT8170B1 Transistor Specification

Transistor Code		KT8170B1
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		KT27
Collector Power Dissipation (Maximum)	PC	40W
Collector-Base Voltage (Maximum)	VCB	600V
Collector-Emitter Voltage (Maximum)	VCE	300V
Collector Current (Maximum)	IC	1.5A
Operating Junction Temperature (Maximum)	TJ	100°C
Emitter-Base Voltage (Maximum)	VEB	9V
Forward Current Transfer Ratio (hFE Value)		8
Transition Frequency	FT	4MHz

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