IR1010 NPN Transistor

The IR1010 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the IR1010 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The IR1010 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the IR1010 transistor as follows.

IR1010 Transistor Specification

Transistor Code		IR1010
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO3
Collector Power Dissipation (Maximum)	PC	100W
Collector-Base Voltage (Maximum)	VCB	60V
Collector Current (Maximum)	IC	10A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	1V
Forward Current Transfer Ratio (hFE Value)		500

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