HSE823 NPN Transistor

The HSE823 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the HSE823 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HSE823 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the HSE823 transistor as follows.

HSE823 Transistor Specification

Transistor Code		HSE823
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO3
Collector Power Dissipation (Maximum)	PC	115W
Collector-Base Voltage (Maximum)	VCB	90V
Collector-Emitter Voltage (Maximum)	VCE	80V
Operating Junction Temperature (Maximum)	TJ	140°C
Forward Current Transfer Ratio (hFE Value)		20
Transition Frequency	FT	0.5MHz

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