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HN1C03F NPN Transistor

The HN1C03F is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the HN1C03F transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HN1C03F transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the HN1C03F transistor as follows.

Circuit diagram symbol of the HN1C03F transistor

HN1C03F Transistor Specification

Transistor Code HN1C03F
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package SM6
Transistor SMD Code C3A_C3B
Collector Power Dissipation (Maximum) PC 0.3W
Collector-Base Voltage (Maximum) VCB 50V
Collector-Emitter Voltage (Maximum) VCE 20V
Collector Current (Maximum) IC 0.3A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 25V
Forward Current Transfer Ratio (hFE Value) 200
Transition Frequency FT 30MHz
Collector Capacitance CC 4.8pF

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More Transistors Datasheets in SM6 Package

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