HLB123D NPN Transistor

The HLB123D is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the HLB123D transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HLB123D transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the HLB123D transistor as follows.

HLB123D Transistor Specification

Transistor Code		HLB123D
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO-126ML
Collector Power Dissipation (Maximum)	PC	30W
Collector-Base Voltage (Maximum)	VCB	600V
Collector-Emitter Voltage (Maximum)	VCE	400V
Collector Current (Maximum)	IC	1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	8V
Forward Current Transfer Ratio (hFE Value)		10

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