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HEPS5013 PNP Transistor

The HEPS5013 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the HEPS5013 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HEPS5013 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the HEPS5013 transistor as follows.

Circuit diagram symbol of the HEPS5013 transistor

HEPS5013 Transistor Specification

Transistor Code HEPS5013
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package TO5
Collector Power Dissipation (Maximum) PC 6W
Collector-Base Voltage (Maximum) VCB 40V
Collector-Emitter Voltage (Maximum) VCE 40V
Collector Current (Maximum) IC 3A
Operating Junction Temperature (Maximum) TJ 175°C
Forward Current Transfer Ratio (hFE Value) 85
Transition Frequency FT 4MHz

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