HBD682 PNP Transistor

The HBD682 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the HBD682 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HBD682 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the HBD682 transistor as follows.

HBD682 Transistor Specification

Transistor Code		HBD682
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO126F
Collector Power Dissipation (Maximum)	PC	40W
Collector-Base Voltage (Maximum)	VCB	100V
Collector-Emitter Voltage (Maximum)	VCE	100V
Collector Current (Maximum)	IC	4A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		750

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