HBD435 NPN Transistor

The HBD435 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the HBD435 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HBD435 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the HBD435 transistor as follows.

HBD435 Transistor Specification

Transistor Code		HBD435
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO220
Collector Power Dissipation (Maximum)	PC	40W
Collector-Base Voltage (Maximum)	VCB	32V
Collector-Emitter Voltage (Maximum)	VCE	32V
Collector Current (Maximum)	IC	4A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		85
Transition Frequency	FT	3MHz

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