GME0404-1 PNP Transistor

The GME0404-1 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the GME0404-1 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GME0404-1 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the GME0404-1 transistor as follows.

GME0404-1 Transistor Specification

Transistor Code		GME0404-1
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO106
Collector Power Dissipation (Maximum)	PC	0.36W
Collector-Base Voltage (Maximum)	VCB	40V
Collector-Emitter Voltage (Maximum)	VCE	30V
Operating Junction Temperature (Maximum)	TJ	125°C
Forward Current Transfer Ratio (hFE Value)		20
Transition Frequency	FT	200MHz
Collector Capacitance	CC	12pF

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