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GE10008 NPN Transistor

The GE10008 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the GE10008 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GE10008 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the GE10008 transistor as follows.

Circuit diagram symbol of the GE10008 transistor

GE10008 Transistor Specification

Transistor Code GE10008
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO3
Collector Power Dissipation (Maximum) PC 175W
Collector-Base Voltage (Maximum) VCB 650V
Collector-Emitter Voltage (Maximum) VCE 450V
Collector Current (Maximum) IC 20A
Operating Junction Temperature (Maximum) TJ 200°C
Emitter-Base Voltage (Maximum) VEB 8V
Forward Current Transfer Ratio (hFE Value) 30
Collector Capacitance CC 325pF

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