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FHD128B NPN Transistor

The FHD128B is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the FHD128B transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The FHD128B transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the FHD128B transistor as follows.

Circuit diagram symbol of the FHD128B transistor

FHD128B Transistor Specification

Transistor Code FHD128B
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO-18
Collector Power Dissipation (Maximum) PC 0.7W
Collector-Base Voltage (Maximum) VCB 25V
Collector-Emitter Voltage (Maximum) VCE 20V
Collector Current (Maximum) IC 0.8A
Operating Junction Temperature (Maximum) TJ 175°C
Forward Current Transfer Ratio (hFE Value) 1000

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