CHT5551SGP NPN Transistor

The CHT5551SGP is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the CHT5551SGP transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The CHT5551SGP transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the CHT5551SGP transistor as follows.

CHT5551SGP Transistor Specification

Transistor Code		CHT5551SGP
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT-363
Transistor SMD Code		ES
Collector Power Dissipation (Maximum)	PC	0.2W
Collector-Base Voltage (Maximum)	VCB	180V
Collector-Emitter Voltage (Maximum)	VCE	160V
Collector Current (Maximum)	IC	0.2A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		80
Transition Frequency	FT	100MHz
Collector Capacitance	CC	6pF

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