BUR51S NPN Transistor

The BUR51S is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BUR51S transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BUR51S transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BUR51S transistor as follows.

BUR51S Transistor Specification

Transistor Code		BUR51S
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO3
Collector Power Dissipation (Maximum)	PC	350W
Collector-Emitter Voltage (Maximum)	VCE	250V
Collector Current (Maximum)	IC	60A
Forward Current Transfer Ratio (hFE Value)		15
Transition Frequency	FT	16MHz

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