BTD5213M3 NPN Transistor

The BTD5213M3 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BTD5213M3 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BTD5213M3 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BTD5213M3 transistor as follows.

BTD5213M3 Transistor Specification

Transistor Code		BTD5213M3
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT-89
Transistor SMD Code		DF
Collector Power Dissipation (Maximum)	PC	2W
Collector-Base Voltage (Maximum)	VCB	100V
Collector-Emitter Voltage (Maximum)	VCE	100V
Collector Current (Maximum)	IC	1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		120
Transition Frequency	FT	230MHz
Collector Capacitance	CC	6pF

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