BSP16T1G PNP Transistor

The BSP16T1G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the BSP16T1G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BSP16T1G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the BSP16T1G transistor as follows.

BSP16T1G Transistor Specification

Transistor Code		BSP16T1G
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT223
Transistor SMD Code		BT2
Collector Power Dissipation (Maximum)	PC	1.5W
Collector-Base Voltage (Maximum)	VCB	350V
Collector-Emitter Voltage (Maximum)	VCE	300V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		30
Transition Frequency	FT	15MHz
Collector Capacitance	CC	15pF

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