BLV30-12 NPN Transistor

The BLV30-12 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BLV30-12 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BLV30-12 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BLV30-12 transistor as follows.

BLV30-12 Transistor Specification

Transistor Code		BLV30-12
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		M111
Collector Power Dissipation (Maximum)	PC	30W
Collector-Base Voltage (Maximum)	VCB	36V
Collector-Emitter Voltage (Maximum)	VCE	18V
Collector Current (Maximum)	IC	6A
Operating Junction Temperature (Maximum)	TJ	200°C
Emitter-Base Voltage (Maximum)	VEB	4V
Forward Current Transfer Ratio (hFE Value)		10
Transition Frequency	FT	175MHz
Collector Capacitance	CC	32pF

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