BLV10 NPN Transistor

The BLV10 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BLV10 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BLV10 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BLV10 transistor as follows.

BLV10 Transistor Specification

Transistor Code		BLV10
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		M174
Collector Power Dissipation (Maximum)	PC	20W
Collector-Base Voltage (Maximum)	VCB	36V
Collector-Emitter Voltage (Maximum)	VCE	18V
Collector Current (Maximum)	IC	1.5A
Operating Junction Temperature (Maximum)	TJ	200°C
Emitter-Base Voltage (Maximum)	VEB	4V
Forward Current Transfer Ratio (hFE Value)		10
Transition Frequency	FT	1000MHz
Collector Capacitance	CC	12pF

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