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BFU660F NPN Transistor

The BFU660F is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BFU660F transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BFU660F transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BFU660F transistor as follows.

Circuit diagram symbol of the BFU660F transistor

BFU660F Transistor Specification

Transistor Code BFU660F
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package SOT343F
Transistor SMD Code D3*
Collector Power Dissipation (Maximum) PC 0.225W
Collector-Base Voltage (Maximum) VCB 16V
Collector-Emitter Voltage (Maximum) VCE 5.5V
Collector Current (Maximum) IC 0.06A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 2.5V
Forward Current Transfer Ratio (hFE Value) 90
Transition Frequency FT 21000MHz

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More Transistors Datasheets in SOT343F Package

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