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BDY60B NPN Transistor

The BDY60B is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BDY60B transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BDY60B transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BDY60B transistor as follows.

Circuit diagram symbol of the BDY60B transistor

BDY60B Transistor Specification

Transistor Code BDY60B
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO3
Collector Power Dissipation (Maximum) PC 30W
Collector-Base Voltage (Maximum) VCB 120V
Collector-Emitter Voltage (Maximum) VCE 60V
Collector Current (Maximum) IC 5A
Operating Junction Temperature (Maximum) TJ 175°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 80
Transition Frequency FT 30MHz

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