BD651F NPN Transistor

The BD651F is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BD651F transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BD651F transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BD651F transistor as follows.

BD651F Transistor Specification

Transistor Code		BD651F
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		ISO220
Collector Power Dissipation (Maximum)	PC	62W
Collector-Base Voltage (Maximum)	VCB	140V
Collector-Emitter Voltage (Maximum)	VCE	120V
Collector Current (Maximum)	IC	8A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		750
Transition Frequency	FT	3MHz

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