BD536J PNP Transistor

The BD536J is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the BD536J transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BD536J transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the BD536J transistor as follows.

BD536J Transistor Specification

Transistor Code		BD536J
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO220
Collector Power Dissipation (Maximum)	PC	50W
Collector-Base Voltage (Maximum)	VCB	60V
Collector-Emitter Voltage (Maximum)	VCE	60V
Collector Current (Maximum)	IC	4A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		30
Transition Frequency	FT	3MHz

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