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BC847BDW1T3G NPN Transistor

The BC847BDW1T3G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BC847BDW1T3G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BC847BDW1T3G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BC847BDW1T3G transistor as follows.

Circuit diagram symbol of the BC847BDW1T3G transistor

BC847BDW1T3G Transistor Specification

Transistor Code BC847BDW1T3G
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package SOT363
Transistor SMD Code 1F
Collector Power Dissipation (Maximum) PC 0.38W
Collector-Base Voltage (Maximum) VCB 50V
Collector-Emitter Voltage (Maximum) VCE 45V
Collector Current (Maximum) IC 0.1A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 6V
Forward Current Transfer Ratio (hFE Value) 200
Transition Frequency FT 100MHz
Collector Capacitance CC 4.5pF

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