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BC650DS NPN Transistor

The BC650DS is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BC650DS transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BC650DS transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BC650DS transistor as follows.

Circuit diagram symbol of the BC650DS transistor

BC650DS Transistor Specification

Transistor Code BC650DS
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO92
Collector Power Dissipation (Maximum) PC 0.625W
Collector-Base Voltage (Maximum) VCB 30V
Collector-Emitter Voltage (Maximum) VCE 30V
Collector Current (Maximum) IC 0.2A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 6V
Forward Current Transfer Ratio (hFE Value) 680
Transition Frequency FT 100MHz
Collector Capacitance CC 3pF

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