The 55GN01MA-TL-E is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 55GN01MA-TL-E transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.
The 55GN01MA-TL-E transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.
Circuit diagram symbol of the 55GN01MA-TL-E transistor as follows.
| Transistor Code | 55GN01MA-TL-E | |
|---|---|---|
| Transistor Type | BJT | |
| Transistor Polarity | NPN | |
| Transistor Material | Silicon(SI) | |
| Package | SOT-323 | |
| Transistor SMD Code | ZD | |
| Collector Power Dissipation (Maximum) | PC | 0.4W |
| Collector-Base Voltage (Maximum) | VCB | 20V |
| Collector-Emitter Voltage (Maximum) | VCE | 10V |
| Collector Current (Maximum) | IC | 0.07A |
| Operating Junction Temperature (Maximum) | TJ | 150°C |
| Emitter-Base Voltage (Maximum) | VEB | 3V |
| Forward Current Transfer Ratio (hFE Value) | 100 | |
| Transition Frequency | FT | 3000MHz |
| Collector Capacitance | CC | 1pF |
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