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2SD1616G NPN Transistor

The 2SD1616G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2SD1616G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2SD1616G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2SD1616G transistor as follows.

Circuit diagram symbol of the 2SD1616G transistor

2SD1616G Transistor Specification

Transistor Code 2SD1616G
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO92
Collector Power Dissipation (Maximum) PC 0.75W
Collector-Base Voltage (Maximum) VCB 60V
Collector-Emitter Voltage (Maximum) VCE 50V
Collector Current (Maximum) IC 1A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 8V
Forward Current Transfer Ratio (hFE Value) 200
Transition Frequency FT 100MHz
Collector Capacitance CC 19pF

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