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2SD1021G NPN Transistor

The 2SD1021G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2SD1021G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2SD1021G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2SD1021G transistor as follows.

Circuit diagram symbol of the 2SD1021G transistor

2SD1021G Transistor Specification

Transistor Code 2SD1021G
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO92
Collector Power Dissipation (Maximum) PC 0.35W
Collector-Base Voltage (Maximum) VCB 40V
Collector-Emitter Voltage (Maximum) VCE 30V
Collector Current (Maximum) IC 1A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 200
Transition Frequency FT 130MHz
Collector Capacitance CC 22pF

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