2SA1011E PNP Transistor

The 2SA1011E is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the 2SA1011E transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2SA1011E transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the 2SA1011E transistor as follows.

2SA1011E Transistor Specification

Transistor Code		2SA1011E
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO220
Collector Power Dissipation (Maximum)	PC	25W
Collector-Base Voltage (Maximum)	VCB	180V
Collector-Emitter Voltage (Maximum)	VCE	180V
Collector Current (Maximum)	IC	1.5A
Operating Junction Temperature (Maximum)	TJ	175°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		100
Transition Frequency	FT	100MHz
Collector Capacitance	CC	30pF

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