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2N6653-1 NPN Transistor

The 2N6653-1 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2N6653-1 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N6653-1 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2N6653-1 transistor as follows.

Circuit diagram symbol of the 2N6653-1 transistor

2N6653-1 Transistor Specification

Transistor Code 2N6653-1
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO3
Collector Power Dissipation (Maximum) PC 150W
Collector-Base Voltage (Maximum) VCB 350V
Collector-Emitter Voltage (Maximum) VCE 300V
Collector Current (Maximum) IC 20A
Operating Junction Temperature (Maximum) TJ 175°C
Emitter-Base Voltage (Maximum) VEB 7V
Forward Current Transfer Ratio (hFE Value) 10
Transition Frequency FT 25MHz
Collector Capacitance CC 300pF

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