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2N6112 NPN Transistor

The 2N6112 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2N6112 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N6112 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2N6112 transistor as follows.

Circuit diagram symbol of the 2N6112 transistor

2N6112 Transistor Specification

Transistor Code 2N6112
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package U29-1
Collector Power Dissipation (Maximum) PC 0.36W
Collector-Base Voltage (Maximum) VCB 50V
Collector-Emitter Voltage (Maximum) VCE 30V
Collector Current (Maximum) IC 0.05A
Operating Junction Temperature (Maximum) TJ 125°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 185
Transition Frequency FT 160MHz
Collector Capacitance CC 10pF

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