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2N5706 NPN Transistor

The 2N5706 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2N5706 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N5706 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2N5706 transistor as follows.

Circuit diagram symbol of the 2N5706 transistor

2N5706 Transistor Specification

Transistor Code 2N5706
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO218
Collector Power Dissipation (Maximum) PC 80W
Collector-Base Voltage (Maximum) VCB 36V
Collector-Emitter Voltage (Maximum) VCE 18V
Collector Current (Maximum) IC 7A
Operating Junction Temperature (Maximum) TJ 200°C
Emitter-Base Voltage (Maximum) VEB 3V
Forward Current Transfer Ratio (hFE Value) 15
Collector Capacitance CC 100pF

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