2N5595 NPN Transistor

The 2N5595 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2N5595 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N5595 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2N5595 transistor as follows.

2N5595 Transistor Specification

Transistor Code		2N5595
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO128
Collector Power Dissipation (Maximum)	PC	30W
Collector-Base Voltage (Maximum)	VCB	36V
Collector-Emitter Voltage (Maximum)	VCE	18V
Collector Current (Maximum)	IC	1.2A
Operating Junction Temperature (Maximum)	TJ	175°C
Emitter-Base Voltage (Maximum)	VEB	3V
Forward Current Transfer Ratio (hFE Value)		20
Transition Frequency	FT	1500MHz
Collector Capacitance	CC	10pF

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