2N1779 NPN Transistor

The 2N1779 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2N1779 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2N1779 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 2N1779 transistor as follows.

2N1779 Transistor Specification

Transistor Code		2N1779
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Germanium(GE)
Package		TO46
Collector Power Dissipation (Maximum)	PC	0.1W
Collector-Base Voltage (Maximum)	VCB	25V
Collector Current (Maximum)	IC	0.2A
Operating Junction Temperature (Maximum)	TJ	100°C
Emitter-Base Voltage (Maximum)	VEB	15V
Forward Current Transfer Ratio (hFE Value)		20
Transition Frequency	FT	3MHz
Collector Capacitance	CC	15pF

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